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| FLC317MG-4 High Voltage - High Power GaAs FET FEATURES *E Output Power: P1dB=34.8dBm(Typ.) High *E Gain: G1dB=9.5dB(Typ.) High *E PAE: add=37%(Typ.) High *E Proven Reliability *E Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for general purpose application in the C-Band frequency range as it provides superior power,gain,and efficiency. EUD stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25oC) Item Symbol Rating Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS PTot Tstg Tch 15 -5 15 -65 to +175 175 Unit V V W o C o C RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25oC) Item Symbol Condition Limit DC Input Voltage Forward Gate Current Reverse Gate Current Operating channel temperature VDS IGF IGR Tch RG=100 RG=100 10 <19.4 >-2.0 145 Unit V mA mA o C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Limit Item Symbol Condition Min. Typ. Max. Saturated Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Unit mA mS Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Power-added Efficiency Thermal Resistance IDSS gm Vp VGSO P1dB G1dB add Rth VDS=5V,VGS=0V VDS=5V,IDS=800mA VDS=5V,IDS=60mA IGS=-60uA VDS=10V f=4.2GHz IDS(DC)=0.6IDSS(Typ) Channel to Case -1.0 -5.0 33.5 8.5 - 1200 600 -2.0 34.8 9.5 37.0 8.0 1800 -3.5 10.0 V V dBm dB % o C/W ESD Edition 1.1 May 2005 Class III 2000 V~ CASE STYLE: MG Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k) 1 FLC317MG-4 High Voltage - High Power GaAs FET 2 FLC317MG-4 High Voltage - High Power GaAs FET 3 FLC317MG-4 High Voltage - High Power GaAs FET Package Out Line PIN ASSIGMENT 1 : GATE 2 : SOURCE(Flange) 3 : DRAIN 4 : SOURCE(Flange) Unit:mm 4 FLC317MG-4 High Voltage - High Power GaAs FET For further information please contact : Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: *E not put these products into the mouth. Do Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 *E not alter the form of this product into a gas, powder, or liquid Do through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. *E Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road, Tsim Sha Tsui Kowloon, Hong kong Tel: +852-2377-0227 Fax: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho, Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) Tel +81-55-275-4411 Fax +81-55-275-9461 Sales Division 1,Kanai-cho,Sakae-ku,Yokohama,244-0845,Japan Tel +81-45-853-8156 Fax +81-45-853-8170 5 |
Price & Availability of FLC317MG-4
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